DISTRIBUTION OF SODIUM IN SILICON NITRIDE

被引：9

作者：

FRANZ, I

LANGHEIN.W

机构：

[1] AEG-Telefunken, Forschungsinstitut Ulm and Röhrenwerk, Ulm

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 03期

关键词：

D O I：

10.1016/0038-1101(69)90025-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper describes radiochemical examinations of the diffusion behaviour and content of sodium in single layer silicon nitride films and double layer silicon dioxide-silicon nitride films on silicon. The most significant result is that the sodium is gettered and enriched in the nitride in double layer films. © 1969.

引用

页码：145 / &

共 16 条

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[2] BURGESS TE, 1968, J ELECTROCHEM SOC, V115, pC69
[3] DALTON JV, 1966, J ELECTROCHEM SOC, V113, pC165
[4] NONDESTRUCTIVE THICKNESS MEASUREMENT OF THIN FILMS ON MICROSTRUCTURES
FRANZ, I
LANGHEIN.W
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 987 - &
[5] FRANZ I, 1966, TELEFUNKEN ZTG, V39, P359
[6] FRANZ I, 1966, TELEFUNKEN ZTG, V39, P365
[7] FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194
[8] GOTZBERGER A, 1966, J ELECTROCHEM SOC, V113, P138
[9] GOTZBERGER A, 1967, BELL SYST TECH J, V46, P1055
[10] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

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