UHF MOS TETRODE WITH POLYSILICON GATE

被引：5

作者：

KLAASSEN, FM

WILTING, HJ

DEGROOT, WCJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 01期

关键词：

D O I：

10.1016/0038-1101(80)90163-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：23 / &

共 12 条

[1]

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[2]

BROWN DM, 1972, SOLID STATE TECHNOL, V15, P33

[3] MO GATE TETRODE [J].

BROWN, DM ;

CONNERY, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1302-1307

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[5]

HART PAH, 1970, PHIL TECH REV, V31, P224

[6]

KLAASSEN FM, 1968, PHILIPS RES REP, V23, P478

[7]

KLAASSEN FM, UNPUBLISHED

[8]

NIENHUIS RJ, 1970, PHILIPS TECH REV, V31, P259

[9]

OKABE T, 1976, P TOKYO SOLID ST DEV

[10] GATE NOISE IN FIELD EFFECT TRANSISTORS AT MODERATELY HIGH FREQUENCIES [J].

VANDERZIEL, A .

PROCEEDINGS OF THE IEEE, 1963, 51 (03) :461-&

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