ELECTRICAL PROPERTIES OF EPITAXIAL SILICON FILMS ON ALPHA-ALUMINA

[21] RUNYAN WR, 1965, SILICON SEMICONDUCTO, P179

[22] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[23] SIRTL E, 1961, Z METALLKD, V52, P529

[24] DISLOCATION STRUCTURES IN SINGLE-CRYSTAL AL2O3 [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (02) : 81 - 86

[25] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[26] A THIN-FILM SPACE-CHARGE-LIMITED TRIODE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (09): : 1197 - &

[21] RUNYAN WR, 1965, SILICON SEMICONDUCTO, P179

[22] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[23] SIRTL E, 1961, Z METALLKD, V52, P529

[24] DISLOCATION STRUCTURES IN SINGLE-CRYSTAL AL2O3 [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (02) : 81 - 86

[25] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[26] A THIN-FILM SPACE-CHARGE-LIMITED TRIODE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (09): : 1197 - &