ELECTRICAL PROPERTIES OF EPITAXIAL SILICON FILMS ON ALPHA-ALUMINA

[11] KENNEDY DP, 1962, IRE T ELECTRON DEV, V9, P174

[12] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[13] MEASUREMENT OF THE DEPT OF DIFFUSED LAYERS IN SILICON BY THE GROOVING METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 141 - 144

[14] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[15] TWINNING IN SILICON EPITAXIALLY DEPOSITED ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) : 3444 - &

[16] NUCLEATION GROWTH STRUCTURE AND EPITAXY OF THIN SURFACE FILMS [J]. ADVANCES IN PHYSICS, 1965, 14 (55) : 327 - +

[17] SILICON/CORUNDUM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2746 - &

[18] ETCHING CORUNDUM WITH SILICON [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (125): : 1073 - &

[19] ROBINSON PH, 1966, T METALL SOC AIME, V236, P268

[20] EXTREMELY LOW CAPACITANCE SILICON FILM MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 379 - &

[11] KENNEDY DP, 1962, IRE T ELECTRON DEV, V9, P174

[12] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[13] MEASUREMENT OF THE DEPT OF DIFFUSED LAYERS IN SILICON BY THE GROOVING METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 141 - 144

[14] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[15] TWINNING IN SILICON EPITAXIALLY DEPOSITED ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) : 3444 - &

[16] NUCLEATION GROWTH STRUCTURE AND EPITAXY OF THIN SURFACE FILMS [J]. ADVANCES IN PHYSICS, 1965, 14 (55) : 327 - +

[17] SILICON/CORUNDUM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2746 - &

[18] ETCHING CORUNDUM WITH SILICON [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (125): : 1073 - &

[19] ROBINSON PH, 1966, T METALL SOC AIME, V236, P268

[20] EXTREMELY LOW CAPACITANCE SILICON FILM MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 379 - &