TWINNING IN SILICON EPITAXIALLY DEPOSITED ON SAPPHIRE

[1] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[3] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &

[4] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &

[5] JOYCE BA, 1965, T METALL SOC AIME, V233, P556

[6] LARSSEN PA, TO BE PUBLISHED

[7] MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[8] NOLDER R, 1965, T METALL SOC AIME, V233, P549

[9] STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1536 - &

[1] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[3] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &

[4] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &

[5] JOYCE BA, 1965, T METALL SOC AIME, V233, P556

[6] LARSSEN PA, TO BE PUBLISHED

[7] MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[8] NOLDER R, 1965, T METALL SOC AIME, V233, P549

[9] STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1536 - &