STRESS IN COMPONENTS OF A THIN FILM SILICON MONOXIDE CAPACITOR AND ITS RELATIONSHIP TO DIELECTRIC LOSS

The cantilevered substrate technique has been used to measure the stress in aluminium and silicon monoxide films deposited in sequence on glass substrates. The stress is compressive in aluminium and tensile in silicon monoxide although the latter may be changed by prior exposure of the aluminium film to atmosphere. Electrical measurements were made on capacitors fabricated during the stress experiments. These showed that a definite relation existed between the dielectric loss and the stress. Possible reasons are suggested for these results. © 1969 Chapman and Hall.