A NEW APPROACH TO AC CHARACTERIZATION OF BIPOLAR-TRANSISTORS

被引：15

作者：

HURKX, GAM

机构：

[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期

关键词：

A. C. CURRENTS - BASE CURRENT - COLLECTOR CURRENT - CONTINUITY EQUATIONS - EXCESS PHASE SHIFT - TRANSPARENT EMITTER;

D O I：

10.1016/0038-1101(88)90426-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Edited Abstract)

引用

页码：1269 / 1275

页数：7

共 13 条

[1]

AGNEW RP, 1942, DIFF EQUAT, P117

[2]

CARRIER GF, 1968, ORDINARY DIFFERENTIA, P79

[3] PARTITIONED-CHARGE-BASED MODELING OF BIPOLAR-TRANSISTORS FOR NON-QUASI-STATIC CIRCUIT SIMULATION [J].

FOSSUM, JG ;

VEERARAGHAVAN, S .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :652-654

[4]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[5] THE TRANSIENT INTEGRAL CHARGE CONTROL RELATION - A NOVEL FORMULATION OF THE CURRENTS IN A BIPOLAR-TRANSISTOR [J].

KLOSE, H ;

WIEDER, AW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) :1090-1099

[6]

LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P50

[7] SIMPLIFIED COMPUTER-AIDED ANALYSIS OF DOUBLE-DIFFUSED TRANSISTORS INCLUDING 2-DIMENSIONAL HIGH-LEVEL EFFECTS [J].

ROULSTON, DJ ;

SEHGAL, J ;

CHAMBERL.SG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :809-&

[8] 3-DIMENSIONAL DERIVATIONS OF THE BIPOLAR RECIPROCITY THEOREM AND GUMMEL EQUATION [J].

SEITCHIK, JA ;

ARLEDGE, LA ;

PING, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :61-66

[9]

SELBERHERR S, 1984, ANAL SIMULATION SEMI, P37

[10]

SLOTBOOM JW, 1977, THESIS TH EINDHOVEN

← 1 2 →