3-DIMENSIONAL DERIVATIONS OF THE BIPOLAR RECIPROCITY THEOREM AND GUMMEL EQUATION

被引：4

作者：

SEITCHIK, JA

ARLEDGE, LA

PING, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/T-ED.1986.22438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：61 / 66

页数：6

共 9 条

[1] AN OPERATIONAL METHOD TO MODEL CARRIER DEGENERACY AND BAND-GAP NARROWING [J].

ADLER, MS .

SOLID-STATE ELECTRONICS, 1983, 26 (05) :387-396

[2] MATHEMATICAL PROOF OF THE VALIDITY OF RECIPROCITY IN ONE-DIMENSIONAL BIPOLAR-TRANSISTORS WITH ARBITRARY BASE PARAMETERS [J].

DEMAN, HJ ;

GHANNAM, MY ;

MERTENS, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1720-1723

[3] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J].

DEMAN, HJJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :833-+

[4] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J].

EBERS, JJ ;

MOLL, JL .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12) :1761-1772

[5]

LYNN DK, 1968, ANAL DESIGN INTEGRAT, P68

[6]

MULLER RS, 1977, DEVICE ELECTRONICS I, P227

[7] ONE-DIMENSIONAL DEVICE MODEL OF THE NPN BIPOLAR-TRANSISTOR INCLUDING HEAVY DOPING EFFECTS UNDER FERMI STATISTICS [J].

NAKAGAWA, A .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :943-949

[8] P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W ;

SPARKS, M ;

TEAL, GK .

PHYSICAL REVIEW, 1951, 83 (01) :151-162

[9] TRANSPORT EQUATIONS IN HEAVY DOPED SILICON [J].

VANOVERSTRAETEN, RJ ;

DEMAN, HJ ;

MERTENS, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :290-298

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