NEUTRON-ACTIVATION STUDY OF A GETTERING TREATMENT FOR CZOCHRALSKI SILICON SUBSTRATES

被引：30

作者：

KATZ, LE ^{[1
]}

SCHMIDT, PF ^{[1
]}

PEARCE, CW ^{[1
]}

机构：

[1] WESTERN ELECT CO INC,ALLENTOWN,PA 18103

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127470

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：620 / 624

页数：5

共 12 条

[1] INVESTIGATION OF SILICON ETCHING AND SILICON DIOXIDE BUBBLE FORMATION DURING SILICON OXIDATION IN HC1-OXYGEN ATMOSPHERES
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[J]. THIN SOLID FILMS, 1977, 42 (01) : 127 - 131
[2] HIGH OXYGEN CZOCHRALSKI SILICON CRYSTAL-GROWTH RELATIONSHIP TO EPITAXIAL STACKING-FAULTS
KATZ, LE
HILL, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1151 - 1155
[3] STRUCTURE AND COMPOSITION OF SILICON-OXIDES GROWN IN HCI-O2 AMBIENTS
MONKOWSKI, J
TRESSLER, RE
STACH, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1867 - 1873
[4] Pearce C.W., 1977, SEMICONDUCTOR SILICO, P606
[5] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS
ROZGONYI, GA
DEYSHER, RP
PEARCE, CW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1910 - 1915
[6] SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS
ROZGONYI, GA
MAHAJAN, S
READ, MH
BRASEN, D
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 531 - 533
[7] A NEUTRON-ACTIVATION ANALYSIS STUDY OF THE SOURCES OF TRANSITION GROUP METAL CONTAMINATION IN THE SILICON DEVICE MANUFACTURING PROCESS
SCHMIDT, PF
PEARCE, CW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 630 - 636
[8] PARAMETRIC NEUTRON-ACTIVATION ANALYSIS OF SAMPLES GENERATING COMPLEX GAMMA-RAY SPECTRA
SCHMIDT, PF
RILEY, JE
MCMILLAN, DJ
[J]. ANALYTICAL CHEMISTRY, 1979, 51 (02) : 189 - 196
[9] SCHMIDT PF, 1977, ANAL CHEM, V48, P1962
[10] SUN R, 1980, Patent No. 4216489

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