REACTIVITY OF SOLID SILICON WITH HYDROGEN UNDER CONDITIONS OF A LOW-PRESSURE PLASMA

被引:67
作者
WEBB, AP
VEPREK, S
机构
[1] Institute of Inorganic Chemistry, University of Zürich-Irchel
关键词
D O I
10.1016/0009-2614(79)80436-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The reactivity of solid silicon with a dydrogen has been studied in a temperature range between about 10°C and ≈540°C at discharge currents up to ≈420 mA and a pressure of ≈0.13 mbar (0.1 torr). At a given current the reaction rate displays a pronounced maximum at a temperature T1 ≲ 60°C and it approaches zero at T2 ≲ 300°C; both T1 and T2 d pending on the discharge current. Consequently, chemical transport of silicon is possible in temperature as well as plasma gradients. © 1979.
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页码:173 / 177
页数:5
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