A-SI1-XCX-H-BASED TRANSISTOR PERFORMANCE AND THE RELATIONSHIP TO ELECTRICAL AND OPTICAL-PROPERTIES

被引：10

作者：

CATALANO, A ^{[1
]}

NEWTON, J ^{[1
]}

TRAFFORD, M ^{[1
]}

ROTHWARF, A ^{[1
]}

机构：

[1] DREXEL UNIV,DEPT ELECT & COMP ENGN,PHILADELPHIA,PA 19104

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2839 / 2843

页数：5

共 10 条

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[6] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS [J].

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[7] FLAT-BAND VOLTAGE AND SURFACE-STATES IN AMORPHOUS SILICON-BASED ALLOY FIELD-EFFECT TRANSISTORS [J].

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[8] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

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[9]

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[10]

[No title captured]

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