FLAT-BAND VOLTAGE AND SURFACE-STATES IN AMORPHOUS SILICON-BASED ALLOY FIELD-EFFECT TRANSISTORS

被引：28

作者：

SHUR, MS

HACK, M

HYUN, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.333976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：382 / 386

页数：5

共 15 条

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[4] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
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[7] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS
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[8] THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03): : 511 - 517
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