OPTIMUM IMPLANTATION CONDITIONS FOR ION-BEAM SYNTHESIS OF BURIED COBALT SILICIDE LAYERS IN SI(100)

被引：7

作者：

DEKEMPENEER, EHA

OTTENHEIM, JJM

VANDENHOUDT, DWE

BULLELIEUWMA, CWT

LATHOUWERS, EGC

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.105438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion beam synthesis of buried CoSi2 layers in Si(100) (Co+ energy = 170 keV, dose = 1.7 X 10(17) ions cm-2) is studied as a function of implantation temperature (250 --> 500-degrees-C) and beam current density ( 1.6 --> 3-mu-A cm-2). Conventional cross-section transmission electron microscopy and Rutherford backscattering spectrometry are used to correlate the experimental conditions with the amount of pinholes in the silicide layer and the flatness of the CoSi2/Si interfaces after annealing. Optimum implantation conditions yielding a pinhole-free buried silicide layer with flat interfaces are obtained.

引用

页码：467 / 469

页数：3

共 6 条

[1] ION-BEAM SYNTHESIS OF COBALT SILICIDE - EFFECT OF IMPLANTATION TEMPERATURE [J].