REENTRANT LAYER-BY-LAYER GROWTH - A NUMERICAL STUDY

被引:136
作者
SMILAUER, P
WILBY, MR
VVEDENSKY, DD
机构
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND
[2] UNIV LONDON UNIV COLL,DEPT ELECT & ELECTR ENGN,LONDON WC1E 7JE,ENGLAND
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 07期
关键词
D O I
10.1103/PhysRevB.47.4119
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Reentrant layer-by-layer growth is studied using a Monte Carlo simulation of a solid-on-solid model. A previously proposed explanation of the phenomenon based on the existence of an activation barrier for adatom hops off descending steps has been used to reproduce correctly most of the available experimental data. However, based on a detailed inspection of the growth kinetics, we propose a different interpretation of the origin of low-temperature layer-by-layer growth, which stresses the importance of the incorporation mechanism of an atom arriving on the surface.
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页码:4119 / 4122
页数:4
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