COMPARISON OF JUNCTION RESISTANCE OF (PBSN)TE AND (PBSN)SE INFRARED DETECTOR DIODES

被引：30

作者：

PREIER, H

机构：

来源：

INFRARED PHYSICS | 1978年 / 18卷 / 01期

关键词：

D O I：

10.1016/0020-0891(78)90008-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：43 / 46

页数：4

共 13 条

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[2]

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