THE IMPACT OF SCALING-DOWN OXIDE THICKNESS ON POLY-SI THIN-FILM TRANSISTORS IV CHARACTERISTICS

被引：12

作者：

LIN, PS

LI, TS

机构：

[1] Subrnicron Technology Division, Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 04期

关键词：

D O I：

10.1109/55.285404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The key factors reducing the fluctuations of poly-Si I-V fluctuations are investigated. Besides the trapping states at the grain boundary, the oxide thickness plays an important role on poly-Si characteristics. Scaling down the oxide thickness will improve both poly-Si performance and I-V uniformnity.

引用

页码：138 / 139

页数：2

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