BUILT-IN SPACE-CHARGE AT JUNCTIONS BETWEEN HEAVILY DOPED AND SEMI-INSULATING GAAS-LAYERS

被引：3

作者：

LEHOVEC, K

PAO, H

机构：

[1] Univ of Southern California, United States

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 09期

关键词：

D O I：

10.1016/0038-1101(88)90109-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1433 / 1440

页数：8

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