REDUCTION OF MEASUREMENT TIME OF LIFETIME PROFILES BY APPLYING HIGH-TEMPERATURES

Generation lifetime profiling of MOS wafers is time consuming when high quality material is monitored. It is a wellknown fact that the carrier generation can be enhanced by applying high temperatures. This fact is exploited when implementing a setup with the following specifications: Measurement time per MOS capacitor less than 10s, accessible lifetime span two decades (e. g. , 10 mu s less than equivalent to tau //G less than equivalent to 1 ms), number of measurement points 30-150, IEEE bus controlled, probe stepper compatibility. It is shown experimentally that the diffusion current from the neutral bulk does not contribute to the lifetime profile.