IN DEPTH GENERATION LIFETIME PROFILING OF HEAT-TREATED CZOCHRALSKI SILICON

被引：4

作者：

BRAUNIG, D ^{[1
]}

YANG, KH ^{[1
]}

TAN, TY ^{[1
]}

SCHNEIDER, CP ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 01期

关键词：

D O I：

10.1002/pssa.2210920134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：327 / 335

页数：9

共 21 条

[1]

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[2]

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[3]

FERRETTI R, 1974, IEEE T NUCLEAR SCI, V26, P4828

[4] THE EFFECTS OF PROCESSING CONDITIONS ON THE OUT-DIFFUSION OF OXYGEN FROM CZOCHRALSKI SILICON [J].

HECK, D ;

TRESSLER, RE ;

MONKOWSKI, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5739-5743

[5]

INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[6]

JASTRZEBSKI L, 1983, DEFECTS SILICON, P142

[7]

KISHINO S, 1982, JAPAN J APPL PHYS, V27, P1

[8] CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J].

MAHER, DM ;

STAUDINGER, A ;

PATEL, JR .

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[9] EXCESS SOLUBILITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (09) :871-873

[10] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :336-337

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