EVALUATION OF OXYGEN PRECIPITATED SILICON-CRYSTALS BY DEEP-LEVEL PHOTOLUMINESCENCE AT ROOM-TEMPERATURE AND ITS MAPPING

A deep-level photoluminescence (PL), which corresponds to the D1 line (0.81 eV) at 4.2 K, is investigated at room temperature for oxygen precipitated Czochralski Si crystals in their growth directions. Analyses are made of the macroscopic and microscopic distributions of the room temperature D1 line intensity (I(D)) the room temperature band-to-band PL intensity (I(B)), carrier lifetime (gamma), and precipitated oxygen concentration (DELTA[O(i)]). The relative concentration distribution of the D1 line deep-level, which is represented by distribution of I(D)/gamma, is shown to be conveniently expressed by the distribution of I(D)'/I(B)v with a value of nu between 0.5 and 1. From the distributions of I(D)/I(B)v and DELTA[O(i)], we find that the deep-level concentration of the D1 line increases (decreases) as the precipitated oxygen concentration increases (decreases) with close proportional correlation in their spatial distributions.