CHARACTERIZATION OF SEMI-INSULATING GAAS WAFERS BY ROOM-TEMPERATURE EL2-RELATED PHOTOLUMINESCENCE

被引：22

作者：

TAJIMA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.100081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：959 / 961

页数：3

共 18 条

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[5]

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[8] OBSERVATION OF LATTICE-DEFECTS IN GAAS AND HEAT-TREATED SI CRYSTALS BY INFRARED LIGHT-SCATTERING TOMOGRAPHY [J].

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[9] MAPPING OF EL2-RELATED LUMINESCENCE ON SEMI-INSULATING GAAS WAFERS AT ROOM-TEMPERATURE [J].

TAJIMA, M .

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[10]

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