PHOTO-LUMINESCENCE RELATED TO DISLOCATIONS IN ANNEALED CZOCHRALSKI-GROWN SI CRYSTALS

被引：26

作者：

TAJIMA, M

MATSUSHITA, Y

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

[2] TOSHIBA CORP,SEMICOND DEVICE ENGN LAB,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 09期

关键词：

Photoluminescence;

D O I：

10.1143/JJAP.22.L589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deep level photoluminescence at 4. 2 K and 77 K from annealed Czochralski-grown Si crystals is investigated in relation to dislocations generated during the oxygen precipitation process. The appearance of the 'rod-like defects' induces two broad bands at 0. 81 and 0. 88 ev. The generation of perfect dislocation loops punched out from oxygen precipitates introduces two strong and sharp lines at 0. 808 and 0. 874 ev. The characteristics of these signals are discussed in comparison with the dislocation-related lines observed in plastically deformed Si crystals.

引用

页码：L589 / L591

页数：3

共 14 条

[1]

DROZDOV NA, 1976, JETP LETT+, V23, P597

[2] NATURE OF DISLOCATION LUMINESCENCE IN SILICON [J].