CAVITY LENGTH AND DOPING DEPENDENCE OF 1.5-MU-M GAINAS/GAINASP MULTIPLE QUANTUM-WELL LASER CHARACTERISTICS

被引：26

作者：

ZAH, CE

BHAT, R

MENOCAL, SG

FAVIRE, F

ANDREADAKIS, NC

KOZA, MA

CANEAU, C

SCHWARZ, SA

LO, Y

LEE, TP

机构：

[1] Bellcore, Red Bank

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 04期

关键词：

D O I：

10.1109/68.53245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated high-power 1.5-μm ridge-waveguide lasers with GaInAs/GaInAsP multiple quantum well active layers. For 1-mm long devices, we measured a threshold current of 35 mA and an output power of 62 mW per facet. The cavity length and doping dependence of threshold current, quantum efficiency, and resonant frequency have been investigated experimentally. With heavy Zn-doping in the barrier layers, we observe an increase in differential gain by a factor of 1.8. © 1990 IEEE

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页码：231 / 233

页数：3

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