SURFACE-MORPHOLOGY OF OXYGEN-IMPLANTED WAFERS

被引:21
作者
NAKASHIMA, S
IZUMI, K
机构
[1] NTT LSI Laboratories, Atsugi 243-01, 3-1, Morinosato Wakamiya
关键词
D O I
10.1557/JMR.1990.1918
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface morphology of SIMOX wafers implanted at 180 keV with doses of 0.4-2.2 × 1018 16O+ cm−2 in a temperature range of 400–700 °C has been investigated using transmission electron microscopy (TEM) replica and cross-sectional TEM (XTEM) techniques. Wafer temperature during oxygen implantation strongly affects the morphology. A number of dents are formed on the surface of wafers implanted at temperatures higher than 510 °C with a dose of 1.8 × 1018 cm−2. Increasing the wafer temperature causes the dents to grow. The dents disappear by a high-temperature anneal of 1260 °C after the implantation. It is found that oxygen implantation through a 50-nm-thick screen oxide film prevents dent formation. A model explaining the dent formation and dent growth is also proposed. © 1990, Materials Research Society. All rights reserved.
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页码:1918 / 1928
页数:11
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