DOUBLE PULSE MEASUREMENTS OF AVALANCHING P-N-JUNCTION SUBMICROSECOND TRANSIENT THERMAL RESPONSE

被引：1

作者：

NIGRIN, J

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1972年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.1685607

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

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页码：264 / +

页数：1

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[1] INPUT POWER INDUCED THERMAL EFFECTS RELATED TO TRANSITION TIME BETWEEN AVALANCHE AND SECOND BREAKDOWN IN P-N SILICON JUNCTIONS
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[2] A METHOD FOR HEAT FLOW RESISTANCE MEASUREMENTS IN AVALANCHE DIODES
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[4] TRANSIENT HEAT FLOW FROM AN EPITAXIAL LAYER INTO SUBSTRATE
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[5] PULSE MEASUREMENTS OF TRANSIENT THERMAL RESPONSE AND TEMPERATURE OF AVALANCHING P-N JUNCTION
NIGRIN, J
[J]. ELECTRONICS LETTERS, 1971, 7 (17) : 481 - &