STRUCTURE EFFECTS ON SCHOTTKY-BARRIER HEIGHTS OF PB/SI AND BI/SI INTERFACES

被引：9

作者：

HRICOVINI, K

LELAY, G

KAHN, A

TALEBIBRAHIMI, A

BONNET, JE

LASSABATERE, L

DUMAS, M

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

[2] CNRS,CRMC2,F-13288 MARSEILLE 9,FRANCE

[3] UNIV MONTPELLIER 2,LESIC,F-34060 MONTPELLIER,FRANCE

[4] UNIV AIX MARSEILLE 1,UFR SCI MAT,F-13331 MARSEILLE 3,FRANCE

来源：

SURFACE SCIENCE | 1991年 / 251卷

关键词：

D O I：

10.1016/0039-6028(91)91027-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the development of Schottky barrier heights during the initial formation of Pb,Bi/Si interfaces. In the sub-monolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. In addition to a bulk-sensitive mode used to determine the band bending changes (hv = 108 eV), we recorded spectra in a surface-sensitive mode (hv = 130 eV) to better follow the surface peak changes associated with the different atomic arrangements. We compare the Schottky barrier heights obtained in the monolayer regime with recent measurements on in situ prepared Pb/Si(111) diodes.

引用

页码：424 / 427

页数：4

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