CHARACTERIZATION OF SILICON DELTA-DOPED GAAS GROWN BY MBE AT VARIOUS TEMPERATURES

被引：8

作者：

KOENRAAD, PM

VONCKEN, APJ

SINGLETON, J

BLOM, FAP

LANGERAK, CJGM

LEYS, MR

PERENBOOM, JAAJ

SPERMON, SJRM

VANVLEUTEN, WC

WOLTER, JH

机构：

[1] CATHOLIC UNIV NIJMEGEN,HIGH FIELD MAGNET LAB,6525 ED NIJMEGEN,NETHERLANDS

[2] CATHOLIC UNIV NIJMEGEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90371-E

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Si δ-doped GaAs samples have been grown by MBE at 480° C, 530° C and 620° C. The sample grown at 480° C with a doping concentration of 2 × 1012 cm-2 has a mobility of 6760 cm2/V · s at 4.2 K. Shubnikov-de Haas measurements showed that the spreading of the donors in the samples grown at 480° C is near 20 Å. On these samples we performed the first reported cyclotron resonance measurements. © 1990.

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页码：538 / 541

页数：4

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