IMPURITY GETTERING OF POLYCRYSTALLINE SOLAR-CELLS FABRICATED FROM REFINED METALLURGICAL-GRADE SILICON

被引：10

作者：

SAITOH, T

WARABISAKO, T

KURODA, E

ITOH, H

MATSUBARA, S

TOKUYAMA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：671 / 677

页数：7

共 19 条

[1]

Chu T. L., 1975, 11th IEEE Photovoltaic Specialists Conference, P303

[2]

Davis J. R., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P106

[3] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[4]

Hanoka J. I., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P485

[5]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

[6] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J].

HSIEH, CM ;

MATHEWS, JR ;

SEIDEL, HD ;

PICKAR, KA ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :238-240

[7] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :53-55

[8]

Hunt L. P., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P125

[9]

KRESSEL H, 1967, RCA REV, P175

[10] GROWTH AND CHARACTERIZATION OF POLYCRYSTALLINE SILICON INGOTS FROM METALLURGICAL GRADE SOURCE MATERIAL [J].

KURODA, E ;

SAITOH, T .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (02) :251-260

← 1 2 →