ALUMINUM SPIKING AT CONTACT WINDOWS IN AL/TI-W/SI

被引：11

作者：

CHANG, PH

HAWKINS, R

BONIFIELD, TD

MELTON, LA

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

[2] UNIV TEXAS DALLAS,DEPT CHEM,RICHARDSON,TX 75083

来源：

关键词：

D O I：

10.1063/1.99491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：272 / 274

页数：3

共 8 条

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[2] Fraser D. B., 1983, VLSI technology, P347
[3] INTERCONNECTIONS IN VLSI
GHATE, PB
[J]. PHYSICS TODAY, 1986, 39 (10) : 58 - 66
[4] GHATE PD, 1982, MATER RES SOC S P, V10, P371
[5] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS
MCCALDIN, JO
SANKUR, H
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 171 - &
[6] Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13
[7] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION
SANKUR, H
MCCALDIN, JO
DEVANEY, J
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 64 - 66
[8] TU KN, 1978, THIN FILMS INTERDIFF, P396