STUDY OF SURFACE-REACTIONS IN ATOMIC LAYER EPITAXY OF GAAS USING TRIMETHYLGALLIUM BY REFLECTANCE DIFFERENCE SPECTROSCOPY AND MASS-SPECTROSCOPY

被引：13

作者：

MAA, BY ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

THIN SOLID FILMS | 1993年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90119-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An in situ real-time study of surface reactions in atomic layer epitaxy (ALE) of GaAs using trimethylgallium (TMGa) by reflectance difference spectroscopy (RDS) and sampled beam mass spectroscopy is reported. These studies reveal several phases in atomic layer epitaxy of GaAs and the self-limiting atomic layer deposition of epilayers using TMGa. The results also lend further support to a proposed reaction kinetics model from a recent RD investigation. The self-limiting mechanism which occurs during TMGa exposure cycles is believed to result from both selective adsorption and reaction of TMGa at As atoms and Ga-vacancy-induced Ga-rich surface reconstructions. It is also shown that strategies for optimal ALE growth of GaAs can be obtained through RD monitoring.

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页码：12 / 16

页数：5

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