ELECTRON AND HOLE DYNAMICS IN AMORPHOUS-SILICON

被引：4

作者：

WERNER, A

KUNST, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.341465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：211 / 213

页数：3

共 24 条

[1]

AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83

[2] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY [J].

DERSCH, H ;

SCHWEITZER, L ;

STUKE, J .

PHYSICAL REVIEW B, 1983, 28 (08) :4678-4684

[3] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

HVAM, JM ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374

[4] TRAPPING AND RECOMBINATION KINETICS IN A-SI-H THIN-FILMS [J].

KONENKAMP, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :643-646

[5] COMPARATIVE-STUDY OF TIME-RESOLVED CONDUCTIVITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J].

KUNST, M ;

WERNER, A .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2236-2241

[6]

LeComber P. G., 1979, Amorphous semiconductors, P251

[7] TRANSIENT PHOTOCONDUCTIVITY IN N-TYPE A-SI-H [J].

MAIN, C ;

RUSSELL, R ;

BERKIN, J ;

MARSHALL, JM .

PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (04) :189-195

[8] TRAPPING, RECOMBINATION, AND METASTABLE STATES IN N-TYPE ALPHA-SI-H [J].

MAIN, C ;

BERKIN, J ;

RUSSELL, R ;

MERAZGA, A ;

MARSHALL, JM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :779-782

[9] CHARACTERIZATION OF TRANSPORT PARAMETERS OF HOLE TRAPS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

OHEDA, H .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2925-2930

[10] ENERGY-LEVELS OF DANGLING-BOND CENTERS IN A-SI-H STUDIED BY PHOTOCAPACITANCE TRANSIENT SPECTROSCOPY [J].

OKUSHI, H ;

TANAKA, K .

PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (03) :135-141

← 1 2 3 →