共 5 条
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs
被引：6
作者：
崔江维
[1
,2
,3
]
薛耀国
[4
]
余学峰
[1
,2
]
任迪远
[1
,2
]
卢健
[1
,2
,3
]
张兴尧
[1
,2
,3
]
机构：
[1] Xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences,Urumqi 830011,China
[2] Xinjiang Key Laboratory of Electric Information Materials and Devices,Urumuqi 830011,China
[3] Graduate University of the Chinese Academy of Sciences,Beijing 100049,China
[4] Xi'an Microelectronic Technology Institute Xi'an 710055,China
来源：
关键词：
sub-micro;
total dose irradiation;
hot-carrier effect;
D O I：
暂无
中图分类号：
TN386.1 [金属-氧化物-半导体（MOS）器件];
学科分类号：
0805 ;
080501 ;
080502 ;
080903 ;
摘要：
Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied.The results show that the manifestations of damage caused by these two effects are quite different,though the principles of damage formation are somewhat similar.For the total dose irradiation effect,the most notable damage lies in the great increase of the off-state leakage current.As to the hot-carrier effect,most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance.It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation,while the negative charges generated in the gate oxide,as well as the interface-trapped charges at the gate interface,cause the degradation of the hot-carrier effect.Different aspects should be considered when the device is generally hardened against these two effects.
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页码：64 / 67
页数：4
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