Real-time control of the molecular beam epitaxy of nitrides

被引:8
作者
Massies, J [1 ]
Grandjean, N [1 ]
机构
[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France
关键词
III-V nitrides; RHEED; laser reflectivity; quantum wells;
D O I
10.1016/S0022-0248(98)01360-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Due to the peculiarities of the growth process of GaN and related alloys on sapphire substrates, reflection high-energy electron diffraction (RHEED) is not sufficient to correctly monitor all the different steps of molecular beam epitaxy growth (MBE). It is shown that laser reflectivity, which is a very simple method, is highly complementary to RHEED. However, RHEED remains an unrivaled tool for the precise control of the growth. In particular, the observation of RHEED intensity oscillations can be used, as for classical semiconductors, to determine the growth rate with monolayer precision and also the composition of ternary alloys such as AlxGa1-xN. The accuracy of such a RHEED based control of MBE growth of nitrides is exemplified by the optical properties of GaN/AlxGa1-xN quantum well structures. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:382 / 387
页数:6
相关论文
共 19 条
  • [1] Spontaneous polarization and piezoelectric constants of III-V nitrides
    Bernardini, F
    Fiorentini, V
    Vanderbilt, D
    [J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10024 - 10027
  • [2] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES
    CHO, AY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S31 - &
  • [3] CHO AY, 1975, PROG SOLID STATE CHE, V10
  • [4] Layer-by-layer growth of AlN and GaN by molecular beam epitaxy
    Daudin, B
    Widmann, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 182 (1-2) : 1 - 5
  • [5] OSCILLATORY SURFACE INPLANE LATTICE SPACING DURING GROWTH OF CO AND OF CU ON A CU(001) SINGLE-CRYSTAL
    FASSBENDER, J
    MAY, U
    SCHIRMER, B
    JUNGBLUT, RM
    HILLEBRANDS, B
    GUNTHERODT, G
    [J]. PHYSICAL REVIEW LETTERS, 1995, 75 (24) : 4476 - 4479
  • [6] GaN and AlxGa1-xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
    Grandjean, N
    Massies, J
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (13) : 1816 - 1818
  • [7] Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
    Grandjean, N
    Leroux, M
    Laugt, M
    Massies, J
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (02) : 240 - 242
  • [8] Real time control of InxGa1-xN molecular beam epitaxy growth
    Grandjean, N
    Massies, J
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (09) : 1078 - 1080
  • [9] Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
    Grandjean, N
    Massies, J
    Leroux, M
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (14) : 2071 - 2073
  • [10] Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
    Leroux, M
    Grandjean, N
    Laügt, M
    Massies, J
    Gil, B
    Lefebvre, P
    Bigenwald, P
    [J]. PHYSICAL REVIEW B, 1998, 58 (20): : 13371 - 13374