Growth condition dependence of the photoluminescence properties of InxGa1-xN/InyGa1-yN multiple quantum wells grown by MOCVD

被引：8

作者：

Harris, JC ^{[1
]}

Brisset, H ^{[1
]}

Someya, T ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

InGaN; quantum wells; photoluminescence; MOCVD;

D O I：

10.1143/JJAP.38.2613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xN/InyGa1-yN multiple quantum wells have been grown by atmospheric pressure metalorganic chemical vapour deposition and characterised by photoluminescence (PL) measurements. The influence of many different growth parameters has been systematically investigated. Use of a high ammonia flow rate and a moderate hydrogen Row rate are observed to be very important for obtaining samples of high indium content and high PL intensity. A low total gas flow rate is also found to be best, and the benefits df using low growth rate and high trimethylindium flow rate are confirmed. Room temperature PL linewidths as low as 64 meV have been achieved.

引用

页码：2613 / 2616

页数：4

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