共 18 条
[1]
Shortest wavelength semiconductor laser diode
[J].
ELECTRONICS LETTERS,
1996, 32 (12)
:1105-1106
[3]
BULMAN GE, 1997, DEVICE RES C
[5]
Bykhovski AD, 1996, APPL PHYS LETT, V68, P818, DOI 10.1063/1.116543
[8]
Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1996, 35 (10B)
:L1315-L1317
[9]
InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1997, 36 (9AB)
:L1130-L1132
[10]
Martin G, 1996, APPL PHYS LETT, V68, P2541, DOI 10.1063/1.116177