Effect of hydrogen on the indium incorporation in InGaN epitaxial films

被引：115

作者：

Piner, EL ^{[1
]}

Behbehani, MK ^{[1
]}

ElMasry, NA ^{[1
]}

McIntosh, FG ^{[1
]}

Roberts, JC ^{[1
]}

Boutros, KS ^{[1
]}

Bedair, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The InN percent in metalorganic chemical vapor deposition (MOCVD) and atomic layer epitaxy (ALE) grown InGaN was found to be significantly influenced by the amount of hydrogen flowing into the reactor. The temperature ranges for this study are 710-780 degrees C for MOCVD, and 650-700 degrees C for ALE. For a given set of growth conditions, an increase df up to 25% InN in InGaN, as determined by x-ray diffraction, can be achieved by reducing the hydrogen flow from 100 to 0 sccm. Additionally, the hydrogen produced from the decomposition of ammonia does not seem to change the InN percent in the films, indicating that the ammonia decomposition rate is less than 0.1%. The phenomenon of having hydrogen control the indium incorporation was not reported in the growth of any other III-V compound previously studied. (C) 1997 American Institute of Physics.

引用

页码：461 / 463

页数：3

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