Ground pattern for improved characteristics of spiral RF transformers on silicon

被引：3

作者：

Ng, KT ^{[1
]}

Rejaei, B ^{[1
]}

Burghartz, JN ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, Microwave Components Grp, Lab Elect Components Technol & Mat, NL-2628 CT Delft, Netherlands

来源：

2001 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2001年

关键词：

integrated transformers; ground pattern; maximum available gain; quality factor; mutual coupling factor;

D O I：

10.1109/SMIC.2001.942344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The maximum available gain is used to evaluate the quality of transformers similarly to that of active devices. A highly structured patterned ground shield is shown to improve the frequency response of the maximum available gain of a transformer at high frequencies.

引用

页码：75 / 78

页数：4

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