Order and surface processes in III-V semiconductor alloys

[21] EVOLUTION OF ALLOY PROPERTIES WITH LONG-RANGE ORDER [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (26) : 3766 - 3769

[22] LONG-RANGE ORDER IN THICK, UNSTRAINED SI0.5GE0.5 EPITAXIAL LAYERS [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (01) : 40 - 43

[23] Average local order parameter in partially ordered GaInP2 [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (25) : 4769 - 4772

[24] Correlation between surface structure and ordering in GaInP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 3013 - 3018

[25] Surface photoabsorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy [J]. APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3747 - 3749

[26] Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) : 6895 - 6899

[27] Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP [J]. APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1796 - 1798

[28] MURATA H, J CRYST GROWTH

[29] OBSERVATION OF (111) ORDERING AND [110] MODULATION IN MOLECULAR-BEAM EPITAXIAL GAAS1-YSBY LAYERS - POSSIBLE RELATIONSHIP TO SURFACE RECONSTRUCTION OCCURRING DURING LAYER GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2310 - 2319

[30] NAKAYAMA H, 1986, I PHYSICS C SERIES, V79, P289

[21] EVOLUTION OF ALLOY PROPERTIES WITH LONG-RANGE ORDER [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (26) : 3766 - 3769

[22] LONG-RANGE ORDER IN THICK, UNSTRAINED SI0.5GE0.5 EPITAXIAL LAYERS [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (01) : 40 - 43

[23] Average local order parameter in partially ordered GaInP2 [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (25) : 4769 - 4772

[24] Correlation between surface structure and ordering in GaInP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 3013 - 3018

[25] Surface photoabsorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy [J]. APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3747 - 3749

[26] Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) : 6895 - 6899

[27] Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP [J]. APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1796 - 1798

[28] MURATA H, J CRYST GROWTH

[29] OBSERVATION OF (111) ORDERING AND [110] MODULATION IN MOLECULAR-BEAM EPITAXIAL GAAS1-YSBY LAYERS - POSSIBLE RELATIONSHIP TO SURFACE RECONSTRUCTION OCCURRING DURING LAYER GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2310 - 2319

[30] NAKAYAMA H, 1986, I PHYSICS C SERIES, V79, P289