Field emission characteristics of phosphorus-doped homoepitaxial diamond films

被引：5

作者：

Kimura, C

Kuriyama, K

Koizumi, S

Kamo, M

Sugino, T

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

[2] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 146卷 / 1-4期

关键词：

homoepitaxial diamond; phosphorous doping; diamond metal contact; field emission; internal electron emission;

D O I：

10.1016/S0169-4332(99)00009-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Field emission characteristics were measured for phosphorous-doped homoepitaxial diamond films grown by microwave plasma assisted chemical vapor deposition. A variation in the turn-on voltage with cathode metals and various temperatures is observed for the sample with high electrical resistivity. This behavior of the turn-on voltage demonstrates that the internal electron emission at the diamond/metal contact influences field emission characteristics. A reduction in the turn-on voltage is found for the diamond film with low electrical resistivity. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：295 / 298

页数：4

共 9 条

[1] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].