DLTS and EPR study of defects in H implanted silicon

被引：4

作者：

Miksic, V

Pivac, B

Rakvin, B

Zorc, H

Corni, F

Tonini, R

Ottaviani, G

机构：

[1] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia

[2] Univ Zagreb, Fac Elect Engn & Comp, Zagreb 41000, Croatia

[3] Univ Modena, Dipartimento Fis, I-41100 Modena, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 186卷

关键词：

silicon; ion implantation; hydrogen; defects;

D O I：

10.1016/S0168-583X(01)00919-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Single crystal CZ Si samples were implanted with hydrogen ions to the dose of 2E16 He ions/cm(2) at room temperature and subsequently annealed in vacuum in the temperature interval from 100 to 900 degreesC. The aim of the experiment was to determine the conditions for bubble formation within the solid film, which may have important technological application. Defects produced in such samples were studied by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR) spectroscopy. It is shown that high dose hydrogen implantation produces vacancy-related and silicon selfinterstitial clusters. The latter are thought to be responsible for the formation of the weak displacement field. The annealing at higher temperatures creates multivacancy-related clusters responsible for the strong displacement field formation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：36 / 40

页数：5

相关论文

共 10 条

[1] Electrical signatures and thermal stability of interstitial clusters in ion implanted Si [J].

Benton, JL ;

Halliburton, K ;

Libertino, S ;

Eaglesham, DJ ;

Coffa, S .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :4749-4756

[2] Evolution from point to extended defects in ion implanted silicon [J].

Benton, JL ;

Libertino, S ;

Kringhoj, P ;

Eaglesham, DJ ;

Poate, JM ;

Coffa, S .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :120-125

[3] ELECTRICAL STUDIES ON H-IMPLANTED SILICON [J].

BRUNI, M ;

BISERO, D ;

TONINI, R ;

OTTAVIANI, G ;

QUEIROLO, G ;

BOTTINI, R .

PHYSICAL REVIEW B, 1994, 49 (08) :5291-5299

[4] VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION [J].

BRUSA, RS ;

NAIA, MD ;

ZECCA, A ;

NOBILI, C ;

OTTAVIANI, G ;

TONINI, R ;

DUPASQUIER, A .

PHYSICAL REVIEW B, 1994, 49 (11) :7271-7280

[5] HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON [J].

CEROFOLINI, GF ;

MEDA, L ;

BALBONI, R ;

CORNI, F ;

FRABBONI, S ;

OTTAVIANI, G ;

TONINI, R ;

ANDERLE, M ;

CANTERI, R .

PHYSICAL REVIEW B, 1992, 46 (04) :2061-2070

[6] HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON [J].

CEROFOLINI, GF ;

BALBONI, R ;

BISERO, D ;

CORNI, F ;

FRABBONI, S ;

OTTAVIANI, G ;

TONINI, R ;

BRUSA, RS ;

ZECCA, A ;

CESCHINI, M ;

GIEBEL, G ;

PAVESI, L .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1995, 150 (02) :539-586

[7] Hydrogen interaction with implantation induced point defects in p-type silicon [J].

Fatima, S ;

Jagadish, C ;

Lalita, J ;

Svensson, BG ;

Hállen, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2562-2567

[8]

LUETGEMEIER H, 1967, PHYS LETT A, V25, P232

[9] Identification of the silicon vacancy containing a single hydrogen atom by EPR [J].

Nielsen, BB ;

Johannesen, P ;

Stallinga, P ;

Nielsen, KB ;

Byberg, JR .

PHYSICAL REVIEW LETTERS, 1997, 79 (08) :1507-1510

[10] Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon [J].

Rakvin, B ;

Pivac, B ;

Tonini, R ;

Corni, F ;

Ottaviani, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 170 (1-2) :125-133