Effect of thermal annealing induced by p-type layer growth on blue and green LED performance

被引：33

作者：

Lee, W ^{[1
]}

Limb, J ^{[1
]}

Ryou, JH ^{[1
]}

Yoo, D ^{[1
]}

Chung, T ^{[1
]}

Dupuis, RD ^{[1
]}

机构：

[1] Georgia Inst Technol, Ctr Compound Semicond, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 02期

关键词：

metalorganic chemical vapor deposition; nitrides; light-emitting diodes;

D O I：

10.1016/j.jcrysgro.2005.10.079

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the electrical and structural qualities of Mg-cloped p-type In0.01Ga0.99N and GaN layers grown under different growth conditions by metalorganic chemical vapor deposition. It was found that we obtained a lower hole concentration and rough surface by reducing the growth temperature down to 930 degrees C in the case of p-GaN. A slight improvement of the hole concentration was obtained for Mg-doped In0.01Ga0.99N grown at 840 degrees C, but this was accompanied by pit formation on the surface. In0.19Ga0.81N/GaN and In0.25Ga0.75N/GaN multiple-quantum-well (MQW) light-emitting diodes (LED) with such different p-layers were also grown. It was found from photoluminescence studies that the optical and structural properties of the MQW in the LED structure were improved by reducing the growth temperature of the p-layer due to reduced thermal annealing effect of the active region during p-layer growth. However, it was also found the electroluminescence intensity was lower for the LEDs with p-In0.01Ga0.99N layers grown at 840 degrees C. degrees 2005 Elsevier B.V. All rights reserved.

引用

页码：577 / 581

页数：5

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