Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

被引：118

作者：

Cao, XA ^{[1
]}

Teetsov, JA

Shahedipour-Sandvik, F

Arthur, SD

机构：

[1] GE Global Res Ctr, Semiconductor Technol Lab, Niskayuna, NY 12309 USA

[2] SUNY Albany, Sch NanoSci & NanoEngn, Albany, NY 12203 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 264卷 / 1-3期

关键词：

atomic force microscopy; V-defects; GaN; light emitting diodes;

D O I：

10.1016/j.jcrysgro.2004.01.031

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A combination of atomic force microscopy (AFM), conductive AFM (C-AFM) and scanning Kelvin probe microscopy (SKPM) was used to investigate the correlation between the surface topography and electrical properties of GaN/InGaN light-emitting diodes (LEDs). Decreased surface potential was found at the V-defects on the p-GaN surface compared to the defect-free regions, and localized currents were detected at the edges of these V-defects under both low forward and reverse bias conditions. These findings suggest that the V-defects and the associated screw and mixed dislocations are responsible for the high leakage current observed in the LED structures. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：172 / 177

页数：6

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