An STM study of current-induced step bunching on Si(111)

被引：119

作者：

Yang, YN ^{[1
]}

Fu, ES ^{[1
]}

Williams, ED ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS & ASTRON,COLLEGE PK,MD 20742

来源：

SURFACE SCIENCE | 1996年 / 356卷 / 1-3期

关键词：

scanning tunneling microscopy; models of non-equilibrium phenomena; surface structure; morphology; roughness; diffusion and migration; silicon; stepped single crystal surfaces; semiconducting surfaces;

D O I：

10.1016/0039-6028(96)00033-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report quantitative measurement of terrace size as a function of annealing time for step bunching induced by direct current heating in the step-down direction for the temperatures 945 degrees C and 1245 degrees C. This result is shown to be inconsistent with simple models of step bunching in which there is a temperature-independent electromigration force on diffusing surface atoms. Deposition of Si atoms onto the surface held at 945 degrees C with current running in the step-down direction slows the step bunching. By estimating the parameters governing step Row from experimental observations, this result is shown to be inconsistent with simple models of step bunching incorporating an electromigration force as the source of diffusional anisotropy. The evolution of step bunching was monitored by measuring the growth of the terrace sizes revealing a functional form of t(proportional to), with alpha similar to 0.5.

引用

页码：101 / 111

页数：11

共 38 条

[21] INITIAL-STAGES OF SILICON HOMOEPITAXY STUDIED BY INSITU REFLECTION ELECTRON-MICROSCOPY [J].