An X-ray photoelectron spectroscopy study of the oxides of GaAs

被引：184

作者：

Surdu-Bob, CC ^{[1
]}

Saied, SO ^{[1
]}

Sullivan, JL ^{[1
]}

机构：

[1] Aston Univ, EEAP, Surface Sci Res Grp, Sch Engn & Appl Sci, Birmingham B4 7ET, W Midlands, England

来源：

APPLIED SURFACE SCIENCE | 2001年 / 183卷 / 1-2期

关键词：

GaAs oxides; XPS;

D O I：

10.1016/S0169-4332(01)00583-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, by the use of X-ray photoelectron spectroscopy, we unequivocally identify the oxides present on GaAs surfaces and accurately measure the binding energies associated with the 2p(3/2), 3d, and Auger lines in the X-ray photoemission spectra. These measurements intended to provide reliable reference data for further work. We conducted an extensive analysis of the oxidation states of Ga metal and oxide powder reference samples. air exposed GaAs wafers, and wafers subjected to various surface treatments (argon plasma treatments and boiling). Based on this experimental evidence, an assignment of the photoelectron peaks to various chemical states is proposed. (C) 2001 Published by Elsevier Science B.V.

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页码：126 / 136

页数：11

相关论文

共 39 条

[21] Surface and interface analysis of GaSb/GaAs semiconductor materials [J].

Li, K ;

Lin, J ;

Wee, ATS ;

Tan, KL ;

Feng, ZC ;

Webb, JB .

APPLIED SURFACE SCIENCE, 1996, 99 (01) :59-66

[22] ULTRAVIOLET-OZONE OXIDATION OF GAAS(100) AND INP(100) [J].

LU, ZH ;

BRYSKIEWICZ, B ;

MCCAFFREY, J ;

WASILEWSKI, Z ;

GRAHAM, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2033-2037

[23] SUBSTRATE CHEMICAL ETCHING PRIOR TO MOLECULAR-BEAM EPITAXY - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) SURFACES ETCHED BY THE H2SO4-H2O2-H2O SOLUTION [J].

MASSIES, J ;

CONTOUR, JP .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :806-810

[24] XPS study of residual oxide layers on p-GaAs surfaces [J].

Mihailova, T ;

Velchev, N ;

Krastev, V ;

Marinova, T .

APPLIED SURFACE SCIENCE, 1997, 120 (3-4) :213-219

[25] XPS INVESTIGATION OF THE INTERACTION BETWEEN ECR-EXCITED HYDROGEN AND THE NATIVE OXIDE OF GAAS(100) [J].

MIKHAILOV, GM ;

BULKIN, PV ;

KHUDOBIN, SA ;

CHUMAKOV, AA ;

SHAPOVAL, SY .

VACUUM, 1992, 43 (03) :199-201

[26] QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

MIZOKAWA, Y ;

IWASAKI, H ;

NISHITANI, R ;

NAKAMURA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1370-1374

[27] ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100) [J].

Pan, JS ;

Wee, ATS ;

Huan, CHA ;

Tan, HS ;

Tan, KL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1997, 30 (18) :2514-2519

[28] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF NATIVE OXIDES ON GAAS [J].

SCHWARTZ, GP ;

GUALTIERI, GJ ;

KAMMLOTT, GW ;

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) :1737-1749

[29]

Sheka I.A., 1966, CHEM GALLIUM

[30] THE THERMAL-OXIDATION OF AIGAAS [J].

SHIN, J ;

GEIB, KM ;

WILMSEN, CW ;

CHU, P ;

WEIDER, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :1029-1034

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