XPS INVESTIGATION OF THE INTERACTION BETWEEN ECR-EXCITED HYDROGEN AND THE NATIVE OXIDE OF GAAS(100)

被引：15

作者：

MIKHAILOV, GM

BULKIN, PV

KHUDOBIN, SA

CHUMAKOV, AA

SHAPOVAL, SY

机构：

[1] Institute of Microelectronics Technology and High Purity Materials, Academy of Science USSR, Chernoglovka

来源：

VACUUM | 1992年 / 43卷 / 03期

关键词：

Electron Cyclotron Resonance;

D O I：

10.1016/0042-207X(92)90261-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The composition and the chemical element states of the native oxide of GaAs(100) during ECR-hydrogen cleaning have been investigated. It was found that carbon-containing impurities and arsenic oxide are removed from the surface at a substrate temperature equal to 150-degrees-C, while gallium oxide is removed at 350-degrees-C. The reduction of arsenic oxide at low substrate temperatures is accompanied by the formation of gallium oxide which diminshes the etching rate.

引用

页码：199 / 201

页数：3

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VACUUM, 1992, 43 (03) :195-197

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