Elemental composition of reactively sputtered indium nitride thin films

被引：31

作者：

Kumar, S ^{[1
]}

Motlan, LM ^{[1
]}

Tansley, TL ^{[1
]}

机构：

[1] MACQUARIE UNIV, DEPT PHYS, SEMICOND SCI & TECHNOL LABS, SYDNEY, NSW 2109, AUSTRALIA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 4A期

关键词：

InN thin films; reactive sputtering; elemental composition; XPS; RBS;

D O I：

10.1143/JJAP.35.2261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium nitride (InN) thin films have been grown on a variety of substrates using low-temperature radio frequency reactive sputtering of indium metal in pure nitrogen plasma. Quantitative compositional analyses of the films, carried out using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS), suggest that large amounts of oxygen are present in them. The high concentration of oxygen in our films is attributed to the voided microstructure as revealed by cross-sectional scanning electron microscopy. The XPS studies also suggest that the oxygen incorporated into the films is bonded to nitrogen.

引用

页码：2261 / 2265

页数：5

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