Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

被引：19

作者：

Lee, HH

Yi, MS

Jang, HW

Moon, YT

Park, SJ

Noh, DY ^{[1
]}

Tang, M

Liang, KS

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea

[2] Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 27期

关键词：

D O I：

10.1063/1.1530376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have determined the absolute indium content incorporated in the crystalline lattice of InGaN films and InGaN/GaN multiple quantum wells using anomalous x-ray scattering (AXS). AXS spectra were obtained near the In K absorption edge at the InGaN (0006) Bragg peak where the InGaN Bragg reflection is well-resolved from the GaN reflections. By comparing the indium composition obtained by AXS to regular x-ray scattering results, which are also sensitive to the lattice strain, we determine, the Poisson ratio of InGaN to be vapproximate to0.23. The AXS method can be effective in determining absolute chemical composition of InGaN independent of the lattice strain, which is. especially valuable for InGaN multiple quantum wells. (C) 2002 American Institute of Physics. [DOI: 10.1063/1.153076].

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页码：5120 / 5122

页数：3

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