Quantum-well width dependence of threshold current density in InGaN lasers

被引：34

作者：

Chow, WW

Amano, H

Takeuchi, T

Han, J

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.124336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quantum-confined Stark effect was found to result in a strong quantum-well width dependence of threshold current density in strained group-III nitride quantum well lasers. For an In0.2Ga0.8N/GaN structure with quantum-well width in the neighborhood of 3.5 nm, our analysis shows that the reduction in spontaneous emission loss by the electron-hole spatial separation outweighs the corresponding reduction in gain to produce a threshold current-density minimum. (C) 1999 American Institute of Physics. [S0003-6951(99)04328-4].

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页码：244 / 246

页数：3

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