InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy

被引：18

作者：

Kuramata, A ^{[1
]}

Domen, K ^{[1
]}

Soejima, R ^{[1
]}

Horino, K ^{[1
]}

Kubota, S ^{[1
]}

Tanahashi, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; InGaN; laser diode; SiC; low-pressure metalorganic vapor phase epitaxy;

D O I：

10.1016/S0022-0248(98)00303-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaN multiple quantum well (MQW) laser diodes were fabricated on a 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). Both threshold current and slope efficiency were improved by changing the MQW structure from five 2.5 nm wells to three 4 nm wells. The anomalously large improvement in slope efficiency suggested the presence of inhomogeneous hole injection. The use of high-reflection (WR) coating also reduced the threshold current. A threshold current of 500 mA was obtained as the minimum value under pulsed current injection at room temperature, corresponding to a threshold current density of 13 kA/cm(2). The maximum pulse duration of 1.5 mu s was obtained under 1 kHz repetition frequency. The number of lasing emission lines increased as the current increased above the threshold. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：826 / 830

页数：5

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