Transport at surface nanostructures measured by four-tip STM

被引:41
作者
Hasegawa, S [1 ]
Shiraki, I [1 ]
Tanabe, F [1 ]
Hobara, R [1 ]
机构
[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
关键词
surface conductivity; surface reconstruction; scanning tunneling microscopy; scanning electron microscopy;
D O I
10.1016/S1567-1739(02)00160-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For in situ measurements of local electrical conductivity of well-defined crystal surfaces in ultrahigh vacuum, we have developed two kinds of microscopic four-point probe methods. One is a 'four-tip STM prober', in which independently driven four tips of scanning tunneling microscope (STM) are used for four-point probe conductivity measurements. The probe spacing can be changed from 500 nm to 1 mm. The other one is monolithic micro-four-point probes, fabricated on silicon chips, whose probe spacing is fixed around several mum. These probes were installed in scanning-electron-microscopy/electron-diffraction chambers, in which the structures of sample surfaces and probe positions were in situ observed. The probes can be positioned precisely on aimed areas on the sample with aid of piezo-actuators. With these machines, the surface sensitivity in conductivity measurements has been greatly enhanced compared with macroscopic four-point probe method. Then the conduction through the topmost atomic layers (surface-state conductivity) and influence of atomic steps upon conductivity could be directly measured. The STM prober is mainly described here. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:465 / 471
页数:7
相关论文
共 20 条
[1]   Scanning nanoscale multiprobes for conductivity measurements [J].
Boggild, P ;
Hansen, TM ;
Kuhn, O ;
Grey, F ;
Junno, T ;
Montelius, L .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (07) :2781-2783
[2]  
Boggild P, 2000, ADV MATER, V12, P947, DOI 10.1002/1521-4095(200006)12:13<947::AID-ADMA947>3.0.CO
[3]  
2-7
[4]   Electrical conduction via surface-state bands [J].
Hasegawa, S ;
Tong, X ;
Jiang, CS ;
Nakajima, Y ;
Nagao, T .
SURFACE SCIENCE, 1997, 386 (1-3) :322-327
[5]   Structures and electronic transport on silicon surfaces [J].
Hasegawa, S ;
Tong, X ;
Takeda, S ;
Sato, N ;
Nagao, T .
PROGRESS IN SURFACE SCIENCE, 1999, 60 (5-8) :89-257
[6]  
Hasegawa S., 2001, Oyo Buturi, V70, P1165
[7]   Surface-state bands on silicon -: Si(111)-√3 x √3-Ag surface superstructure [J].
Hasegawa, S ;
Sato, N ;
Shiraki, I ;
Petersen, CL ;
Boggild, P ;
Hansen, TM ;
Nagao, T ;
Grey, F .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (6B) :3815-3822
[8]   Surface-state bands on silicon as electron systems in reduced dimensions at atomic scales [J].
Hasegawa, S .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (35) :R463-R495
[9]   Measurement of surface state conductance using STM point contacts [J].
Hasegawa, Y ;
Lyo, IW ;
Avouris, P .
SURFACE SCIENCE, 1996, 357 (1-3) :32-37
[10]   Electron conduction through surface states of the Si(111)-(7 x 7) surface [J].
Heike, S ;
Watanabe, S ;
Wada, Y ;
Hashizume, T .
PHYSICAL REVIEW LETTERS, 1998, 81 (04) :890-893